features 1 of 4 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2006, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . inp hbt ldmos rf mems fpd750 0.5w power phemt the fpd750 is an algaas/ingaas pseudomorphic high electron mobility transistor (phemt), featuring a 0.25 mx750 m schottky barrier gate, defined by high -reso- lution stepper-based photolithography. th e double recessed gate structure mini- mizes parasitics to optimize performanc e. the epitaxial structure and processing have been optimized for reliable high-p ower applications. the fpd750 also fea- tures si 3 n 4 passivation and is available in the low-cost plastic sot89, sot343, and dfn packages. ? 27.5dbm linear output power at 12ghz ? 11.5db power gain at 12ghz ? 14.5db max stable gain at 12ghz ? 38dbm o ip3 ? 50% power-added efficiency applications ? narrowband and broadband high-performance amplifiers ? satcom uplink transmitters ? pcs/cellular low-voltage high-efficiency output ampli- fiers ? medium-haul digital radio transmitters rev a1 ds090609 9 package style: bare die fpd7500.5 w power phemt parameter specification unit condition min. typ. max. electrical specifications p 1db gain compression 26.5 27.5 dbm v ds =8v, i ds =50% i dss maximum stable gain (s21/s12) 13.5 14.5 db v ds =8v, i ds =50% i dss power gain at p 1db (g 1db ) 10.5 11.5 db v ds =8v, i ds =50% i dss power-added efficiency (pae) 45 % v ds =8v, i ds =50% i dss , p out =p 1db oip 3 38 dbm v ds =8v, i ds =50% i dss 40 dbm matched for optimal power, tuned for best ip 3 saturated drain-source current (i dss ) 185 230 280 ma v ds =1.3v, v gs =0v maximum drain-source current (i max ) 370 ma v ds =1.3v, v gs +1v transconductance (g m ) 200 ms v ds =1.3v, v gs =0 v gate-source leakage current (i gso )10 a vgs=-5v pinch-off voltage (v p ) |1.0| v v ds =1.3v, i ds =0.36ma gate-source breakdown voltage (v bdgs ) |12.0| |14.0| v i gs =0.75ma gate-drain breakdown voltage (v bdgd ) |14.5| |16.0| v i gd =0.75ma thermal resistivity ( jc) 65 c/w v ds >6v note: t ambient =22c, rf specifications measured at f=12ghz using cw signal.
2 of 4 rev a1 ds090609 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd750 pad layout note: coordinates are referenced from the bottom left hand corner of the die to the center of the bond pad opening. absolute maximum ratings 1 parameter rating unit drain-source voltage (v ds ) (-3v 3 of 4 rev a1 ds090609 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd750 preferred assembly instructions gaas devices are fragile and should be handled with great care . specially designed collets should be used where possible. the back of the die is metallized and the recommended mounting method is by the use of conductive epoxy. epoxy should be applied to the attachment surface uniformly and sparingly to avoi d encroachment of epoxy on to the top face of the die, and ideally should not exceed half the chip height. for automated dispense ablestick lmisr4 is recommended, and for manual dis- pense ablestick 84-1 lmi or 84-1 lmit are recommended . these should be cured at a temperature of 150 c for 1 hour in an oven especially set aside for epoxy curing only. if possible the curing oven should be flushed with dry nitrogen. the gold-tin (80% au 20% sn) eutectic die attach has a melting point of approximately 280c but the absolute temperature being used depends on the leadframe material used and the particular applic ation. the maximum time at used should be kept to a mini- mum. this part has gold (au) bond pads requiring the use of gold (99.99% pure) bondwire. it is recommended that 25.4m diameter gold wire be used. recommended lead bond technique is th ermocompression wedge bonding with 0.001? (25m) diameter wire. the bond tool force shall be 35grams to 38grams. bond ing stage temperature shall be 230c to 240c, heated tool (150c to 160c) is recommended. ultrasonic or thermosonic bonding is not recommended. bonds should be made from the die first and then to the mounti ng substrate or package. the physical length of the bondwires should be minimized especially when making rf or ground connections. handling precautions to avoid damage to the devices, care should be exercised during handling. proper electro- static discharge (esd) precautions should be ob served at all stages of storage, handling, assembly, and testing. esd/msl rating these devices should be treated as class 0 (0v to 250v) usin g the human body model as defined in jedec standard no. 22- a114. further information on esd control measures can be fo und in mil-std-1686 and mil-hdbk-263. this is an unpackaged part and therefore no msl rating applies. application notes and design data application notes and design data including s-parameters, nois e parameters, and device model are available on request from www.rfmd.com. reliability an mttf of 4.2 million hours ata channel temperature of 150c is achieved for the process used to manufacture this device. disclaimers this product is not designed for use in any sp ace-based or life-sustaining/supporting equipment. ordering information delivery quantity ordering code full pack (100) FPD750-000 small quantity (25) FPD750-000sq sample quantity (3) FPD750-000s3
4 of 4 rev a1 ds090609 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or sales-support@rfmd.com . fpd750
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